1. product profile 1.1 general description a 1200 w ldmos power transistor for broadcast applications and industrial applications in the hf to 500 mhz band. 1.2 features and benefits ? typical pulsed performance at frequency of 225 mhz, a supply voltage of 50 v and an i dq of 40 ma, a t p of 100 ? s with ? of 20 %: ? output power = 1200 w ? power gain = 24 db ? efficiency = 71 % ? easy power control ? integrated esd protection ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (10 mhz to 500 mhz) ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? industrial, scientific and medical applications ? broadcast transmitter applications BLF578XR power ldmos transistor rev. 2 ? 4 august 2011 objective data sheet table 1. application information mode of operation f v ds p l g p ? d (mhz) (v) (w) (db) (%) cw 108 50 1200 26 75 pulsed rf 225 50 1400 24 71
BLF578XR all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. objective data sheet rev. 2 ? 4 august 2011 2 of 8 nxp semiconductors BLF578XR power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol 1drain1 2drain2 3gate1 4gate2 5source [1] 5 12 43 4 3 5 1 2 sym117 table 3. ordering information type number package name description version BLF578XR - flanged balanced ldmost ceramic package; 2 mounting holes; 4 leads sot539a table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 110 v v gs gate-source voltage ? 6+11v i d drain current - a t stg storage temperature ? 65 +150 ?c t j junction temperature - 200 ?c
BLF578XR all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. objective data sheet rev. 2 ? 4 august 2011 3 of 8 nxp semiconductors BLF578XR power ldmos transistor 5. thermal characteristics [1] t j is the junction temperature. [2] r th(j-c) is measured under rf conditions. [3] see figure 1 . 6. characteristics 6.1 ruggedness in class-ab operation the BLF578XR is capable of withstanding a load mismatch corresponding to vswr = 65 : 1 through all phases under the following conditions: v ds =50v; i dq =40ma; p l = 1200 w pulsed; f = 225 mhz. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t j = 150 ?c [1] [2] 0.14 k/w z th(j-c) transient thermal impedance from junction to case t j =150 ? c; t p = 100 ? s; ? =20% [3] 0.04 k/w table 6. dc characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =2.5ma110--v v gs(th) gate-source threshold voltage v ds =10 v; i d = 500 ma 1.25 1.7 2.25 v v gsq gate-source quiescent voltage v ds =50 v; i d =20ma 0.8 1.3 1.8 v i dss drain leakage current v gs =0v; v ds =50v--2.8 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v --a i gss gate leakage current v gs =11v; v ds = 0 v - - 280 na r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =16.66a -- ? c rs feedback capacitance v gs =0v; v ds =50v; f= 1mhz --pf c iss input capacitance v gs =0v; v ds =50v; f=1mhz --pf c oss output capacitance v gs =0v; v ds =50v; f=1mhz --pf table 7. rf characteristics mode of operation: pulsed rf; t p = 100 ? s; ? = 20 %; f = 225 mhz; rf performance at v ds =50v; i dq = 40 ma; t case = 25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l = 1200 w 24 db rl in input return loss p l = 1200 w ? 17.5 - db ? d drain efficiency p l = 1200 w 71 - %
BLF578XR all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. objective data sheet rev. 2 ? 4 august 2011 4 of 8 nxp semiconductors BLF578XR power ldmos transistor 7. package outline fig 1. package outline sot539a references outline version european projection issue date iec jedec eiaj sot539a 10-02-02 00-03-03 0 5 10 mm scale p a f b e d u 2 l h q c 5 12 4 3 d 1 e a w 1 ab m m m q u 1 h 1 c b m m w 2 c e 1 m w 3 unit a mm d b 11.81 11.56 0.18 0.10 31.55 30.94 13.72 9.53 9.27 17.12 16.10 10.29 10.03 4.7 4.2 c e u 2 0.25 0.25 0.51 w 3 35.56 qw 2 w 1 f 1.75 1.50 u 1 41.28 41.02 h 1 25.53 25.27 p 3.30 3.05 q 2.26 2.01 ee 1 9.50 9.30 inches 0.465 0.455 0.007 0.004 1.242 1.218 d 1 31.52 30.96 1.241 1.219 0.540 0.375 0.365 0.674 0.634 0.405 0.395 0.185 0.165 0.010 0.010 0.020 1.400 0.069 0.059 1.625 1.615 1.005 0.995 0.130 0.120 0.089 0.079 0.374 0.366 h 3.48 2.97 0.137 0.117 l dimensions (millimetre dimensions are derived from the original inch dimensions) flanged balanced ldmost ceramic package; 2 mounting holes; 4 leads sot539a note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on m3 screw.
BLF578XR all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. objective data sheet rev. 2 ? 4 august 2011 5 of 8 nxp semiconductors BLF578XR power ldmos transistor 8. handling information 9. abbreviations 10. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 8. abbreviations acronym description cw continuous wave hf high frequency ldmos laterally diffused metal-oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor rf radio frequency vswr voltage standing-wave ratio table 9. revision history document id release date data sheet status change notice supersedes BLF578XR v.2 20110804 objective data sheet - BLF578XR v.1 modifications: ? table 4 on page 2 : minimum and maximum values for v gs have been specified. ? table 5 on page 3 : values for r th(j-c) and z th(j-c) have been specified. ? table 6 on page 3 : no minimum value for i dsx will be specified. BLF578XR v.1 20110727 objective data sheet - -
BLF578XR all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. objective data sheet rev. 2 ? 4 august 2011 6 of 8 nxp semiconductors BLF578XR power ldmos transistor 11. legal information 11.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 11.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 11.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? 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applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BLF578XR all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. objective data sheet rev. 2 ? 4 august 2011 7 of 8 nxp semiconductors BLF578XR power ldmos transistor non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 11.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 12. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BLF578XR power ldmos transistor ? nxp b.v. 2011. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 4 august 2011 document identifier: BLF578XR please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 13. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.1 ruggedness in class-ab operation . . . . . . . . . 3 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 handling information. . . . . . . . . . . . . . . . . . . . . 5 9 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 5 11 legal information. . . . . . . . . . . . . . . . . . . . . . . . 6 11.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 6 11.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 11.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 11.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 12 contact information. . . . . . . . . . . . . . . . . . . . . . 7 13 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
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